? 2015 ixys all rights reserved 1 - 5 20150909 MIXG120W1200TEH ixys reserves the right to change limits, test conditions and dimensions. tentative e72873 17 18 21 22 9 10 13 14 1 2 5 6 ntc 31 32 28, 29, 30 23, 24, 25 48 49 50 42 43 44 36 37 38 54, 55, 56 59, 60, 61 d1 d5 d2 d6 d4 d3 t1 t5 t2 t6 t4 t3 terms & conditions of usage the data contained in this product data sheet is exclusively intended for technically trained staff. the user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. the specifcations of our components may not be considered as an assurance of component characteristics. the information in the valid application- and assembly notes must be consi - dered. should you require product information in excess of the data given in this product data sheet or which concerns the specifc application of your product, please contact the sales offce, which is responsible for you. due to technical requirements our product may contain dangerous substances. for information on the types in question please contact the sales offce, which is responsible for you. should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. tentative x2pt igbt module package: e3-pack ? isolation voltage: 4300 v~ ? industry standard outline ? rohs compliant ? base plate: copper internally dcb isolated ? advanced power cycling option: ? phase change material printed on base plate part number MIXG120W1200TEH v ces = 1200 v i c25 = 186 a v ce(sat) = 1.7 v 6-pack + ntc applications: ? ac motor drives ? solar inverter ? medical equipment ? uninterruptible power supply ? air-conditioning systems ? welding equipment ? switched-mode and resonant-mode power supplies ? inductive heating, cookers ? pumps, fans features / advantages: ? x2pt - 2nd generation xtreme light punch through ? tvjm = 175c ? easy paralleling due to the positive temperature coeffcient of the on-state voltage ? rugged x2pt design results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 2x ic ? low v ce(sat) and low thermal resistance ? sonic? diode - fast and soft reverse recovery - low operating forward voltage
? 2015 ixys all rights reserved 2 - 5 20150909 MIXG120W1200TEH ixys reserves the right to change limits, test conditions and dimensions. tentative tentative inverter igbt ratings symbol defnitions conditions min. typ. max. v ces collector emitter voltage t vj = 25c 1200 v v ges v gem max. dc gate voltage max. transient gate emitter voltage -20 -30 +20 +30 v v i c25 i c80 i c100 collector current t c = 25c t c = 80c t c = 100c 186 140 120 a a a p tot total power dissipation t c = 25c 625 w v ce(sat) collector emitter saturation voltage i c = 100 a; v ge = 15 v t vj = 25c t vj = 150c 1.7 2.0 2.0 v v v ge(th) gate emitter threshold voltage i c = 4 ma; v ge = v ge t vj = 25c 6 7 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 150c 2 ma ma i ges gate emitter leakage current v ge = 20 v 500 na r g internal gate resistance 3.9 c iss c oss c rss input capacitance output capacitance reverse transfer (miller) capacitance v ce = 100 v; v gs = 0 v; f = 1 mhz nf pf pf q g q gs q gd total gate charge gate source charge gate drain (miller) cha rge v ce = 600 v; v ge = 15 v; i c = 100 a nc nc nc t d(on) t r t d(off) t f e on e off e rec(off) urn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off inductive switching v ce = 600 v; i c = 100 a t vj = 25c v ge = 15 v; r g = 6.8 (external) 80 40 250 80 6 5.8 ns ns ns ns mj mj mj t d(on) t r t d(off) t f e on e off e rec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off inductive switching v ce = 600 v; i c = 100 a t vj = 150c v ge = 15 v; r g = 6.8 (external) 100 50 300 100 10.5 8.2 ns ns ns ns mj mj mj rbsoa i cm reverse bias safe operating area v ge = 15 v; r g = 6.8 t vj = 150c v cemax = 1200 v 200 a scsoa t sc i sc short circuit safe operating area short circuit duration short circuit duration v cemax = 1200 v v ce = 900 v; v ge = 15 v t vj = 150c non-repetitive 600 10 s a r thjc r thjh thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; ixys test setup 0.38 0.24 k/w k/w
? 2015 ixys all rights reserved 3 - 5 20150909 MIXG120W1200TEH ixys reserves the right to change limits, test conditions and dimensions. tentative tentative inverter diode ratings symbol defnitions conditions min. typ. max. v rrm max. repetitive reverse voltage t vj = 25c 1200 v i f25 i f80 i f100 forward current t c = 25c t c = 80c t c = 100c 180 135 115 a a v f forward voltage i f = 120 a t vj = 25c t vj = 150c 1.9 2.2 v v i r reverse current * not applicable, see ices at igbt v r = v rrm t vj = 25c t vj = 150c * * ma ma q rm i rm t rr e rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy v r = 600 v -di f /dt = 2400 a/s t vj = 25c i f = 120 a c a ns mj q rm i rm t rr e rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy v r = 600 v -di f /dt = 2400 a/s t vj = 150c i f = 120 a 16 120 350 5 c a ns mj r thjc r thjh thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; ixys test setup 0.45 0.30 k/w k/w package e3-pack ratings symbol defnitions conditions min. typ. max. unit i rms rms current per terminal 300 a t stg t op t vj storage temperature operation temperature virtual junction temperature -40 -40 -40 125 150 175 c c c weight 270 g m d mounting torque 3 6 nm d spp d spb creepage distance on surface terminal to terminal terminal to backside 6 12 mm mm d app d apb striking distance through air terminal to terminal terminal to backside 6 12 mm mm v isol isolation voltage t = 1 second t = 1 minute 4300 3600 v v r pin-chip resistance pin to chip v = v cesat + 2ri c resp. v = v f + 2ri f 2.5 m c p coupling capacity per switch between shorted pins of switch and back side metallization pf 50 / 60 hz, rms; i isol < 1 ma ordering part name marking on product delivering mode base qty ordering code standard MIXG120W1200TEH MIXG120W1200TEH box 5 518143 with phase change material MIXG120W1200TEH -pc MIXG120W1200TEH blister 12 xxx xx - xxxx x yy wwx 2d data matrix logo ul part number date code location part number m = module i = igbt x = xpt igbt g = gen 2 / std 120 = current rating [a] w = 6-pack 1200 = reverse voltage [v] t = thermistor eh = e3-pack
? 2015 ixys all rights reserved 4 - 5 20150909 MIXG120W1200TEH ixys reserves the right to change limits, test conditions and dimensions. tentative tentative temperature sensor ntc symbol defnitions conditions min. typ. max. unit r 25 b 25/50 resistance temperature coeffcient t vj = 25c 4.75 5.0 3375 5.25 kw k equivalent circuits for simulation * on die level igbt fw diode v 0 max r 0 max threshold voltage slope resistance * t vj = 125c v mw v 0 max r 0 max threshold voltage slope resistance * t vj = 175c 1.2 11.6 1.2 7.5 v mw 0 2 5 5 0 7 5 10 0 12 5 15 0 1 0 2 1 0 3 1 0 4 1 0 5 r [ ? ] typ. ntc resistance v s . temperature t c [c ] i
? 2015 ixys all rights reserved 5 - 5 20150909 MIXG120W1200TEH ixys reserves the right to change limits, test conditions and dimensions. tentative 17 18 21 22 9 10 13 14 1 2 5 6 ntc 31 32 28, 29, 30 23, 24, 25 48 49 50 42 43 44 36 37 38 54, 55, 56 59, 60, 61 d1 d5 d2 d6 d4 d3 t1 t5 t2 t6 t4 t3 tentative outlines e3-pack 1 2 5 6 9 10 13 14 17 18 21 22 23 24 25 28 29 30 32 31 38 37 36 44 43 42 50 49 48 61 60 59 56 55 54
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